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may 2016 docid028509 rev 3 1 / 13 this is information on a product in full production. www.st.com STF5N80K5 n - channel 800 v, 1.50 typ., 4 a mdmesh? k5 power mosfet in a to - 220fp package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d STF5N80K5 800 v 1.75 4 a ? industrys lowest r ds(on) x area ? industrys best fom (figure of merit) ? ultra - low gate charge ? 100% avalanche tested ? zener - protected applications ? switching applications description this very high voltage n - channel power mosfet is designed using mdmesh? k5 technology based on an innovative proprietary vertical structure. the result is a dramatic r eduction in on - resistance and ultra - low gate charge for applications requiring superior power density and high efficiency. table 1: device summary order code marking package packing STF5N80K5 5n80k5 to - 220fp tube am15572v1_no_tab d(2) g(1) s(3) t o-220f p
contents STF5N80K5 2 / 13 docid028509 rev 3 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteri stics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package information ................................ ................................ ....... 9 4.1 to - 220fp package information ................................ ...................... 10 5 revision history ................................ ................................ ............ 12
STF5N80K5 electrical ratings doc id028509 rev 3 3 / 13 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 30 v i d drain current (continuous) at t c = 25 c 4 a i d drain current (continuous) at t c = 100 c 2.3 a i d (1) drain current (pulsed) 16 a p tot total dissipation at t c = 25 c 20 w dv/dt (2) peak diode recovery voltage slope 4.5 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c = 25 c) 2500 v t j operating junction temperature range - 55 to 150 c t stg storage temperature range notes: (1) pulse width limited by safe operating area (2) i sd 4 a, di/dt =100 a/s; v ds peak < v (br)dss , v dd = 640 v (3) v ds 640 v table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 6.25 c/w r thj - amb thermal resistance junction - ambient 62.5 c/w table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by tjmax) 1.2 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 165 mj
electrical characteristics STF5N80K5 4 / 13 docid028509 rev 3 2 electrical characteristics t c = 25 c unless otherwise specified table 5: on/off - state symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 800 v i dss zero gate voltage drain current v gs = 0 v, v ds = 800 v 1 a v gs = 0 v, v ds = 800 v t c = 125 c (1) 50 a i gss gate body leakage current v ds = 0 v, v gs = 20 v 10 a v gs(th) gate threshold voltage v dd = v gs , i d = 100 a 3 4 5 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 2 a 1.50 1.75 ? notes: (1) defined by design, not subject to production test table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 177 - pf c oss output capacitance - 15 - pf c rss reverse transfer capacitance - 0.3 - pf c o(tr) (1) equivalent capacitance time related v ds = 0 to 640 v, v gs = 0 v - 33 - pf c o(er) (2) equivalent capacitance energy related - 12 - pf r g intrinsic gate resistance f = 1 mhz , i d = 0 a - 16 - ? q g total gate charge v dd = 640 v, i d = 4 a v gs = 10 v see figure 15: "test circuit for gate charge behavior" - 5 - nc q gs gate - source charge - 1.7 - nc q gd gate - drain charge - 2.9 - nc notes: (1) c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . (2) c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss .
STF5N80K5 elec trical characteristics doc id028509 rev 3 5 / 13 table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 400 v, i d = 2 a, r g = 4.7 ? v gs = 10 v see figure 14: "test circuit for resistive load switching times" and figure 19: "switching time waveform" - 12.7 - ns t r rise time - 11.7 - ns t d(off) turn - off delay time - 23 - ns t f fall time - 14.8 - ns table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 4 a i sdm (1) source - drain current (pulsed) - 16 a v sd (2) forward on voltage i sd = 4 a, v gs = 0 v - 1.6 v t rr reverse recovery time i sd = 4 a, di/dt = 100 a/s, v dd = 60 v see figure 16: "test circuit for inductive load switching and diode recovery times" - 265 ns qrr reverrse recovery charge - 1.59 c i rrm reverse recovery current - 12 a t rr reverse recovery time i sd = 4 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c see figure 16: "test circuit for inductive load switching and diode recovery times" - 386 ns q rr reverse recovery charge - 2.18 c i rrm reverse recovery current - 11.3 a notes: (1) pulse width limited by safe operating area (2) pulsed: pulse duration = 300 s, duty cycle 1.5% table 9: gate - source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate - source breakdown voltage i gs = 1ma, i d = 0 a 30 - - v the built - in back - to - back zener diodes are specifically designed to enhance the esd performance of the device. the zener voltage facilitates efficient and cost - effective device integrity protection, thus eliminating the need for additional external componentry.
electrical characteristics STF5N80K5 6 / 13 docid028509 rev 3 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance
STF5N80K5 electrical characteristics doc id028509 rev 3 7 / 13 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalize d on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : maximum avalanche energy vs starting tj figure 13 : source - drain diode forward characteri stics
test circuits STF5N80K5 8 / 13 docid028509 rev 3 3 test circuits figure 14 : test circuit for resistive load switching times figure 15 : test circuit for gate charge behavior figure 16 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : switching time waveform am01469v10 47 k 2.7 k 1 k i g = cons t 100 d.u. t . + pulse width v gs 2200 f v g v dd r l
STF5N80K5 package information doc id028509 rev 3 9 / 13 4 package information in order to meet environmenta l requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package information STF5N80K5 10 / 13 docid028509 rev 3 4.1 to - 220fp package information figure 20 : to - 220fp package outline
STF5N80K5 package information doc id028509 rev 3 11 / 13 table 10: to - 220fp package mechanical data dim. mm min. typ. max. a 4.4 4.6 b 2.5 2.7 d 2.5 2.75 e 0.45 0.7 f 0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
revision history STF5N80K5 12 / 13 docid028509 rev 3 5 revision history table 11: document revision history date revision changes 16 - oct - 2015 1 first release. 06 - nov - 2015 2 updated title in cover page. 0 9 - m ay - 2016 3 modified: title table 2: "absolute maximum ratings" , table 3: "thermal data" , table 5: "on/off - state" , table 6: "dynamic" , table 7: "switching times" , table 8: "source - drain diode" added: section 3.1: "electrical characteristics (curves)" modified: section 4: "test circuits" minor text changes
STF5N80K5 docid028509 rev 3 13 / 13 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and s t assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information se t forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2016 stmicroelectronics C all rights reserved

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